SMG2343

SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2343 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. 1 SC-59 A L 3 3 Top View 2 CB 1 2 FEATURES Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J MARKING 2343 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 1 3 Symbol VDS VGS TA=25° C ID TA=70° C IDM TA=25° C PD Ratings -30 ±20 -4.1 Unit V V A -3.5 -12 1.38 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA 90 ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 1 of 4 SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current Symbol Min. Typ. Max. Unit V V nA µA Teat Conditions VGS=0, ID= -250uA VDS=VGS, ID= -250uA VGS=±20V VDS= -24V, VGS=0 VDS= -24V, VGS=0 Static BVDSS VGS(th) IGSS IDSS -30 -1.0 RDS(ON) gfs 60 -2.0 ±100 -1 -5 45 Drain-Source On-Resistance Forward Transconductance 2 m 65 S VGS= -10V, ID= -4.1A VGS= -4.5V, ID= -3.0A VDS= -10V, ID= -4A Dynamic Total Gate Charge 2 Qg Qgs Qgd 2 - 15.2 5.5 1 8.6 12.2 36.6 20.8 590 75 10 - nS -1 V pF nC Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage 2 VDS= -24V, VGS= -10V, ID= -3A VDS= -15V, VGS= -10V, RG=6 , RD=15 , ID= -1A Td(on) Tr Td(off) Tf Ciss Coss Crss VSD VGS=0,VDS= -25V,f=1.0MHz IS= -1A, VGS=0, TJ=25°C Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 2 of 4 SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 3 of 4 SMG2343 Elektronische Bauelemente -4.1A , -30V , RDS(ON) 45 mΩ P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 4 of 4