SMG2343PE

SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SC-59 A 3 L 3 Top View CB 1 2 2 FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G H J PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -30 RDS(on) (m 57@VGS= -10V 89@VGS= -4.5V ID(A) -3.6 -2.8 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A SYMBOL VDS VGS TA=25°C TA=70°C ID IDM IS RATING -30 ±25 -3.6 -2.9 -10 0.4 1.25 0.8 -55 ~ 150 100 150 UNIT V V A A A W °C °C / W Pulsed Drain Current B Continuous Source Current (Diode Conduction) A Power Dissipation A TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t ≦ 5 sec Maximum Junction to Ambient A RθJA Steady-State Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Nov-2010 Rev. A Page 1 of 4 SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source On-Resistance A Forward Transconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gFS VSD -0.8 -2 2 -0.7 ±100 -1 -10 57 89 V nA μA A mΩ S V VDS = VGS, ID = -250μA VDS = 0V, VGS= ±8V VDS = -24V, VGS= 0V VDS = -24V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -10V, ID = -3.6A VGS= -4.5V, ID = -2.8A VDS= -5V,,ID = -3.6A IS= -0.4A, VGS= 0V TEST CONDITIONS Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 64 1.9 2.5 10 2.8 53.6 46 nC ID= -3.6A VDS= -10V VGS= -5V ID= -1A, VDS= -15V nS VGEN= -10V RG= 50Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Nov-2010 Rev. A Page 2 of 4 SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Nov-2010 Rev. A Page 3 of 4 SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Nov-2010 Rev. A Page 4 of 4