SMG2359P

SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SC-59 A 3 L 3 Top View CB 1 2 2 FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F G H J REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -60 RDS(on) ( 0.381@VGS= -10V 0.561@VGS= -4.5V ID(A) -1.6 -1.3  Gate  Drain A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15  Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Continuous Source Current (Diode Conduction) A Power Dissipation A B SYMBOL VDS VGS TA=25°C TA=70°C ID IDM IS RATING -60 ±20 1.7 1.4 ±15 -1.7 1.3 0.8 -55 ~ 150 100 166 UNIT V V A A A W °C °C/W TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦5 sec Maximum Junction to Ambient A RθJA Steady-State Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jun-2010 Rev. A Page 1 of 4 SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381  P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain-Source Breakdown Voltage Drain-Source On-Resistance A Forward Transconductance A Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) VBR(DSS) RDS(ON) gFS VSD -1 -8 -60 -2.1 300 450 8 -3.5 ±100 -1 -10 381 561 -1.2 V nA μA A V mΩ S V VDS = VGS, ID = -250μA VDS = 0V, VGS= ±20V VDS = -48V, VGS= 0V VDS = -48V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -10V VGS = 0, ID = -1mA VGS= -10V, ID = -1.6A VGS= -4.5V, ID = -1.3A VDS= -15V,,ID = -1.6A IS= -2.5A, VGS=0V TEST CONDITIONS Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf - 18 5 2 8 10 35 12 nS nC ID= -1.6A VDS= -30V VGS= -4.5V ID= -1A, VDD= -30V VGEN= -10V RG= 6Ω RL= 30Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jun-2010 Rev. A Page 2 of 4 SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381  P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jun-2010 Rev. A Page 3 of 4 SMG2359P Elektronische Bauelemente -1.6 A, -60 V, RDS(ON) 0.381  P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jun-2010 Rev. A Page 4 of 4