SMG2390N

SMG2390N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F G H J REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) ( 0.700@VGS= 10V 1.200@VGS= 5.5V ID(A) 1.1 0.8 A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum Unit V V A A A W °C 150 ±20 1.1 ±10 1.1 1.30 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 10 sec Steady State Symbol RJA Typ 93 130 Max 110 150 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. A Page 1 of 2 SMG2390N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Symbol Min. VGS(th) IGSS 1.0 - Typ. Max. 11.3 0.75 ±100 1 Unit V uA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±8V VDS= 120V, VGS= 0V Zero Gate Voltage Drain Current IDSS 10 0.700 uA VDS= 120V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 1.1A Ω 1.200 S V VGS= 5.5V, ID= 0.8A VDS= 10V, ID= 1.1A IS= 1.6A, VGS= 0V On-State Drain Current a ID(on) 10 - Drain-Source On-Resistance a RDS(ON) Forward Transconductance a Diode Forward Voltage a gfs VSD - DYNAMIC b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes a. b. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 7.0 1.1 2.0 8 24 35 10 nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A nC VDS= 10V, VGS= 5.5V, ID= 1.1A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Aug-2010 Rev. A Page 2 of 2