SMG2398N

SMG2398N Elektronische Bauelemente 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A 3 SC-59 L 3 Top View 1 2 CB 1 2 K E D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. F G H J PRODUCT SUMMARY SMG2398N VDS(V) 60 RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V ID(A) 2.2 1.8 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package SC-59 MPQ 3K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range PD @ TA=25°C PD @ TA=70°C ID @ TA=25°C ID @ TA=70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum Unit V V A A A A W W °C 60 ±20 2.2 1.7 ±15 1.7 1.3 0.8 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Notes 1 2 Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. t ≦ 5 sec Steady State Symbol RJA Maximum 100 166 Unit °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Nov-2010 Rev. A Page 1 of 2 SMG2398N Elektronische Bauelemente 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Symbol Min. VGS(th) IGSS 1.0 - Typ. Max. 8 ±100 1 Unit V nA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= ±20V VDS= 48V, VGS= 0V Zero Gate Voltage Drain Current IDSS 50 194 uA VDS= 48V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 2.2A mΩ 273 1.2 S V VGS= 4.5V, ID= 1.8A VDS= 4.5V, ID= 2.2A IS= 1.7A, VGS= 0V On-State Drain Current 1 ID(on) 10 - Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage gfs VSD - DYNAMIC 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf TRR - 4.0 4.0 2.0 10 10 20 10 50 IF=1.7A, di/dt=100 A / uS nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A nC VDS= 30V, VGS= 5V, ID= 2.2A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Nov-2010 Rev. A Page 2 of 2