SMG5406

SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications. A L 3 SC-59 3 Top View 1 2 CB 1 2 K E D FEATURES Simple Drive Requirement Small Package Outline F G H J REF. MARKING 5406 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V TA=70° C Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 1 2 Symbol VDS VGS TA=25° C ID Ratings 30 ±20 3.6 Unit V V A 2.8 IDM 10 1.38 0.01 -55~150 A W W/° C ° C TA=25° C PD Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA 90 ° /W C Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 1 of 4 SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current BVDSS VGS(th) IGSS IDSS 30 1 RDS(ON) gfs 11 3 V V nA µA 10 65 m 90 S VGS=0, ID=250µA VDS=VGS, ID=250µA VGS=±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=3.6A VGS=4.5V, ID=2.8A VDS=5V, ID=3.6A ±100 1 Drain-Source On-Resistance Forward Transconductance 1 Dynamic Total Gate Charge 1 Qg Qgs Qgd 1 - 3 0.8 1.8 5 9 11 2 120 62 24 3.5 5 nS 290 pF nC Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=24V, VGS=4.5V, ID=2.5A VDS=15V, VGS=10V, RG=3.3 , RD=15 , ID=1A VGS=0, VDS=25V, f=1.0MHz f=1.0MHz Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Source-Drain Diode Diode Forward Voltage 1 1 VSD TRR QRR - 7.5 2.5 1.0 - V ns nC IS=1A, VGS=0 IS=3.5A, VGS=0 dI/dt=100A/µs Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width≦300us, duty cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 2 of 4 SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 3 of 4 SMG5406 Elektronische Bauelemente 3.6A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 4 of 4