SMG5409

SMG5409 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5409 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SMG5409 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A L 3 SC-59 3 Top View 1 2 CB 1 2 K E D FEATURES Simple Drive Requirement Small Package Outline F G H J MARKING 5409 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 1 2 Symbol VDS VGS TA=25° C ID TA=70° C IDM TA=25° C PD Ratings -30 ±20 -2.6 Unit V V A -2 -12 1.38 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA 90 ° /W C Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 1 of 4 SMG5409 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current Symbol Min. Typ. Max. Unit Teat Conditions Static BVDSS VGS(th) IGSS IDSS -30 -1.0 RDS(ON) gfs 4 -3.0 V V nA µA -5 120 m 170 S VGS=0, ID= -250uA VDS=VGS, ID= -250uA VGS=±20V VDS= -30V, VGS=0 VDS= -24V, VGS=0 VGS= -10V, ID= -2.6A VGS= -4.5V, ID= -2.0A VDS= -5V, ID= -2.5A ±100 -1 Drain-Source On-Resistance Forward Transconductance 1 Dynamic Total Gate Charge 1 Qg Qgs Qgd 1 - 5 1 3 8 5 20 7 412 91 62 8 nS 660 pF nC Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS= -24V, VGS= -4.5V, ID= -2.6A VDS= -15V, VGS= -10V, RG=3.3 , RD=15 , ID= -1A VGS=0, VDS= -25V, f=1.0MHz Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Diode Forward Voltage 1 1 VSD TRR QRR - 16.8 10 -1 - V ns nC IS= -1A, VGS=0 IS= -2.6A, VGS=0 dI/dt=100A/µs Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width≦300us, duty cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 2 of 4 SMG5409 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 3 of 4 SMG5409 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 15-Aug-2011 Rev. A Page 4 of 4