SMG702

SMG702 500mA, 60V,RDS(ON) 4.5Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG702 is universally used for all commercial industrial surface mount application. Marking : 702 D A L S 3 Top View SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 2 1 B B C D G C J K Drain D G H J K L S G H S Gate o Absolute Maximum Ratings at TA = 25 C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp ≦ 50us) Continuous Drain Current Source All Dimension in mm Symbol VDS VGS VGSM ID IDM PD RthJA Tj, Tstg Ratings 60 ±20 ±40 500 800 225 556 -55~+150 Unit V V V mA mA mW W/ C o o ≦ Pulsed Drain Current (Pulse width≦300us, dutycycle 2%) Total Power Dissipation Thermal Resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range o C Electrical Characteristics( Tj = 25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gat Thershold Voltage Gate-Source Leakage Current Zero Gate Voltage Drain Current On-State Drain Current StaticDrain-Source On-Resistance Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) Ciss Coss Crss Gfs Min. 60 1 _ _ Typ. _ _ _ _ _ _ _ _ _ _ Max. _ Unit V V nA uA mA Test Condition VGS=0V, ID=250uA VDS=2.5V, ID =0.25mA VGS=± 20V, VDS=0 VDS=60V,VGS=0 VDS=7.5V,VGS=10V ID =50mA,VGS=5V 2.5 ± 100 1 _ 500 _ _ _ _ _ 5 4.5 50 Ω ID =500mA, VGS=10V VGS=0V VDS=25V f=1.0MHz Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance http://www.SeCoSGmbH.com/ 25 5 _ pF 80 _ mS VDS>2 VDS(ON), ID=200mA Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 SMG702 Elektronische Bauelemente 500mA, 60V,RDS(ON) 4.5Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 SMG702 Elektronische Bauelemente 500mA, 60V,RDS(ON) 4.5Ω N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3