SMS0610

SMS0610 Elektronische Bauelemente -0.185A, -60V,RDS(ON) 7.5 Ω P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Features * Super High Dense Cell Design For Low R DS(ON) * Rugged And Reliable * SOT-23 Package S 2 A L 3 Top View SOT-23 Dim A B 1 Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 B C D D G C J K Drain Gate Source G H J K L S V D H All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain-Source Diode Forward Current 1 Pulsed Drain Current 2 Symbol VDS VG S ID@TJ =125 C IS IDM PD@TA=25 C Tj, Tstg o o Ratings -60 ±20 -185 -1 -250 360 -55~+150 Unit V V mA A mA mW o Total Power Dissipation 1 Operating Junction and Storage Temperature Range C Thermal Data Parameter Thermal Resistance Junction-ambient 1 Symbol Rthj-a Ratings 350 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SMS0610 Elektronische Bauelemente -0.185A, -60V,RDS(ON) 7.5 Ω P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage o Symbol BVDSS VSD VGS(th) IGSS IDSS RDS(ON) ID(ON) Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Min. -60 _ Typ. _ Max. _ Unit V V V uA uA Test Condition VGS=0V, ID=-1 0uA Forward On Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) -0.75 _ _ _ _ _ _ - 1.4 ID=-200 m A,VGS=0V. VDS=VGS, ID=-250 uA VGS=±20V,VDS=0V VDS=-60V,VGS=0 VGS=-10V, ID=-0.5A -1 _ _ _ -3 ±10 -1 7.5 10 _ Static Drain-Source On-Resistance _ Ω VGS=-4.5V, ID=-0.025A On-State Drain Current Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 600 _ _ _ _ _ _ _ mA VDS=-10V, VGS=-10V 2.8 6.5 10 7.2 80 11 4 430 _ _ _ _ _ _ _ VDD=-25V nS ID=-120mA VGS=-10V RG=6 Ω pF VGS=0V VDS=-25V f=1.0MHz _ _ mS VDS=-10 V, ID=-0.1 A Notes: 1.Surface mounted on FR4 board; t ≦10 sec. 2.Pulse width≦300us, dutycycle≦2%. 3.Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SMS0610 Elektronische Bauelemente -0.185A, -60V,RDS(ON) 7.5 Ω P-Channel Enhancement Mode Power Mos.FET Characteristics Curve 1.4 1.2 VGS = -10V -6.0V -4.5V 1.2 -4.0V VDS = -10V 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 o -55 C 25 C o -ID, Drain Current (A) 1.0 0.8 0.6 0.4 0.2 0.0 -3.5V -ID, Drain Current (A) TA = 125 C o -3.0V -2.0V -VDS, Drain-to-Source Voltage (V) 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Thansfer Characteristics RDS(ON), Normalized Drain-Source,On-Resistance (Ω) 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 ID = -0.5A VGS = -10V C, Capacitance (pF) 80 Ciss 60 40 20 Coss 0 0 10 Crss 20 30 40 50 60 -VDS, Drain-to-Source Voltage (V) Tj, Junction Temperature ( C) o 0 25 50 75 100 125 150 Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature RDS(ON), On-Resistance (Ω) ID = -0.25A 4 RDS(ON), Normalized Drain-Source,On-Resistance (Ω) 5 2.2 2.0 1.8 1.6 -3.5V 1.4 1.2 1.0 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -4.0V -4.5V -5.0V -5.5V VGS = -3.0V 3 TA = 125 C o 2 1 TA = 25 C 0 2 4 6 8 10 o -VGS, Gate-to-Source Voltage (V) -ID, Drain Current (A) Figure 5. On-Resistance Variation with Gate-to-Source Voltage. http://www.SeCoSGmbH.com/ Figure 6. On-Resistance Variation with Drain Current and Gate Voltage. Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SMS0610 Elektronische Bauelemente -0.185A, -60V,RDS(ON) 7.5 Ω P-Channel Enhancement Mode Power Mos.FET P(pk), Peak Transient Power (W) 5 -IS, Source-Drain Current (A) 4 Single Pulse o RθJA = 350 C/W o TA = 25 C 10 VGS = 0V 1 TA = 125 C 25 C 0.01 -55 C o o 3 o 0.1 2 1 0.001 0.0001 0 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 t1, Time (sec) -VSD, Body Diode Forward Voltage (V) Figure 7. Single Pulse Maximum Power Dissipation Figure 8. Body Diode Forward Voltage Variation with Source Current -VGS, Gate to Source Voltage (V) 100 ID = -0.5A 80 -48V 60 VDS = -12V 10 -ID, Drain Current (A) -24V 1 RD S(O N) 100us Lim it 0.1 10s 1s 100 10m 1m s s ms 40 DC 20 0.01 0 0 0.001 VGS = 10V Single Pulse o TA = 25 C 1 10 60 100 Qg, Total Gate Charge (nC) 0.4 0.8 1.2 1.6 2.0 -VDS, Drain-to-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SMS0610 Elektronische Bauelemente -0.185A, -60V,RDS(ON) 7.5 Ω P-Channel Enhancement Mode Power Mos.FET VDD VIN VGS RGEN G S VIN ton td(on) tr 90% toff td(off) 90% 10% RL D VOUT tf VOUT 10% 90% 50% 10% 50% INVERTED PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 1 r(t), Normalized Effective Transient Thermal Impedance 0.5 0.2 0.1 0.05 Duty Cycle = 0.5 0.2 0.1 0.0.5 0.02 PDM t1 t2 0.01 0.01 Single Pulse 1. RθJA(t) = r(t)*RθJA 2. RθJA = see datasheet 3. TJM - TA = PDM*RθJA(t) 4. Duty Cycle, D = t1/t2 0.001 10 -4 10 -3 10 -2 10 -1 1 10 10 2 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5