SMS7400

SMS7400 Elektronische Bauelemente 2.8 A, 30V,RDS(ON) 77mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMS7400 is the N-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. A L 3 Top View SOT-23 Dim A B C D D Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 S 1 2 B G H C J K G J K L S V Featur es * 30V/ 2.8A,RDS(ON)=77 m Ω @VGS=10V * 30V/ 2.3A,RDS(ON)=85 m Ω @VGS=4.5V * 30V/ 1.5A,RDS(ON)=110m Ω @VGS=2.5V * Super High Density Cell Design For Extremely Low RDS(ON) * Exceptional On-Resistance And Max. DC Current Capability H Drain Gate Source All Dimension in mm D Applications * * * * * * * DC/DC Converter Power Management in Notebook DSC LCD Display Inverter Portable Equipment Battery Powered System Load Switch G S *week code: A~Z(1~26),a~z(27~52) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@TJ =150 oC Drain-Source Diode Forward Current Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VG S ID@TA= 25 C ID@TA= 70 C IS IDM PD@TA=25 C PD@TA=70 C Tj, Tstg o o o o Ratings 30 ±12 2.8 2.3 1.25 10 0.33 0.21 -55~+150 Unit V V A A A W o C Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Rthj-a Ratings 100 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SMS7400 Elektronische Bauelemente 2.8 A, 30V,RDS(ON) 77mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage o Symbol BVDSS VSD VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ Unit V V V nA uA uA Test Condition VGS=0V, ID= 250 uA Forward On Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current 0.82 _ _ _ _ 1.2 ID= 1.2 5 A,VGS=0V. VDS=VGS, ID= 250 uA VGS=±12V,VDS=0V VDS= 24V,VGS=0V VDS= 24V,VGS=0V,Tj=55 oC VGS= 10V, ID= 2.8A 0.8 _ _ _ _ 1.6 ±100 1 10 0.077 0.085 0.11 _ _ 0.062 0.07 0.095 _ _ Static Drain-Source On-Resistance RDS(ON) _ _ Ω VGS= 4.5V, ID= 2.3A VGS= 2.5V, ID= 1.5A On-State Drain Current Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Chagre Gate-Drain Chagre Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance ID(ON) Td(ON) Tr Td(Off) Tf Qg Qgs Qgd Ciss Coss Crss Gfs 6 4 _ _ _ _ _ _ _ _ _ _ A VDS≦4.5 V, VGS= 10V VDS≦4.5 V, VGS= 4.5V 2.5 2.5 20 4 4.2 0.6 1.5 350 55 41 4.6 _ _ _ _ VDD= 15V nS VGEN = 10V RG=3 Ω RL =10 Ω 6 _ _ _ _ _ nC VGS= 4.5V VDS= 15V ID= 2A pF VGS=0V VDS= 15V f=1.0MHz _ _ S VDS=4.5 V, ID= 2.8 A http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SMS7400 Elektronische Bauelemente 2.8 A, 30V,RDS(ON) 77mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SMS7400 Elektronische Bauelemente 2.8A, 30V,RDS(ON) 77mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SMS7400 Elektronische Bauelemente 2.8A, 30V,RDS(ON) 77mΩ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5