SMUN5214DW

SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .053(1.35) .045(1.15) 8 o 0 o The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Pb-Free Package is available MARKING DIAGRAM 6 5 4 6 5 4 .096(2.45) .085(2.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Q2 R2 R1 1 2 R1 R2 7X Q1 1 3 2 3 .043(1.10) .035(0.90) Dimensions in inches and (millimeters) 7X = Device Marking MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Symbol V CBO V CEO IC Value 50 50 100 Unit Vdc Vdc mAdc Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C T A = 25°C Symbol PD R Max Note 1 187 1.5 670 Max Note 1 250 2.0 493 188 Note 2 385 3.0 325 208 Note 2 256 2.0 490 Unit mW mW/°C °C/W Unit mW mW/°C °C/W °C/W °C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C T A = 25°C JA Symbol PD R θJA R θJL T J , T stg Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad –55 to +150 2. FR–4 @ 1.0 x 1.0 inch Pad http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 1 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device SMUN5211DW SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 7N 7P R1(K) 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22 2.2 100 47 R2(K) 10 22 47 47 open open 1 2.2 4.7 47 47 47 100 22 Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO I EBO Emitter-Base Cutoff Current SMUN5211DW SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW Collector-Base Breakdown Voltage (I C = 10 ∝A, I E = 0) Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) 4. Pulse Test: Pulse Width < 300 ∝s, Duty Cycle < 2.0% (V EB = 6.0 V, I C = 0) Min – – – – – – – – – – – – – – – – 50 50 Typ – – – – – – – – – – – – – – – – – – Max 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 – – Unit nAdc nAdc mAdc V (BR)CBO V (BR)CEO Vdc Vdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 2 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain SMUN5211DW (V CE = 10 V, I C = 5.0 mA) SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW (Continued) Min Typ 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 – 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 – Max – – – – – – – – – – – – – – 0.25 Unit Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) SMUN5230DW/SMUN5231DW (I C= 10mA, IB= 1mA) SMUN5215DW/SMUN5216DW SMUN5232DW/SMUN5233DW/SMUN5234DW Output Voltage (on) V OL SMUN5211DW (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) SMUN5212DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) SMUN5213DW (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) SMUN5236DW (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) SMUN5237DW Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) V OH (V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ) SMUN5230DW (V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ) SMUN5215DW SMUN5216DW SMUN5233DW 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc – – – – – – – – – – – – – – 4.9 – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc Vdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 3 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ ON CHARACTERISTICS(Note 6.) Input Resistor SMUN5211DW SMUN5212DW SMUN5213DW SMUN5214DW SMUN5215DW SMUN5216DW SMUN5230DW SMUN5231DW SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5236DW SMUN5237DW SMUN5211DW/SMUN5212DW SMUN5213DW/SMUN5236DW SMUN5214DW/SMUN5215DW SMUN5216DW/SMUN5230DW SMUN5231DW/SMUN5232DW SMUN5233DW SMUN5234DW SMUN5235DW SMUN5237DW R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 Max 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 Unit kΩ Resistor Ratio R 1 /R 2 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 300 P D , POWER DISSIPATION (mW) 250 200 150 100 50 833°C 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 4 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5211DW V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 4 100 Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance 10 Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 5 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5212DW V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 h FE , DC CURRENT GAIN (NORMALIZED) 1000 1 100 0.1 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 Figure 8. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 Figure 10. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 6 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5213DW V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 10 1000 100 0.1 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 1 100 Figure 13. DC Current Gain 0.8 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 0.6 1 0.4 0.1 0.2 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 7 of 8 SMUN52XXDW Elektronische Bauelemente NPN Multi-Chip Built-in Resistors Transistor TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5214DW V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) 1 300 250 0.1 200 150 0.01 100 50 0.001 0 20 40 60 80 0 1 2 3 4 5 10 15 20 40 50 60 70 80 90 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 4 100 Figure 18. DC Current Gain 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance 10 Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 22-Jun-2007 Rev. A Page 8 of 8