SMUN5311DW

SMUN5311DW Series Elektronische Bauelemente NPN / PNP Digital Small Signal Transistors RoHS Compliant Product A suffix of “-C” indicates halogen-free. DESCRIPTION The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5311DW series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. SOT-363 A E L B FEATURE Simplifies circuit design Reduces board space Reduces component count Available in 8 mm, 7 inch/3000 unit tape and reel The devices are Pb-Free 6 5 4 F DG K C H J REF. A B C D E F Q2 R2 R1 1 2 R1 R2 Q1 3 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25° unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted) C PARAMETER Collector - Base Voltage Collector - Emitter Voltage Collector Currrent – Continuous SYMBOL VCBO VCEO IC VALUE 50 50 100 187(1) 256(2) 1.5(1) 2.0(2) 670(1) 490(2) 250(1) 385(2) 2.0(1) 3.0(2) 493(1) 325(2) 188(1) 208(2) -55~150 UNIT Vdc Vdc mAdc ONE JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, TA=25° C PD Total Device Dissipation, Derate above 25° C Thermal Resistance, Junction to Ambient RθJA mW mW/° C ° C/W BOTH JUNCTION HEATED THERMAL CHARACTERISTICS Total Device Dissipation, TA=25° C PD Total Device Dissipation, Derate above 25° C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Junction Temperature & Storage Temperature Note: 1. FR-4 @ minimum pad 2. FR-4 @ 1.0 x 1.0 inch pad RθJA RθJL TJ,TSTG mW mW/° C ° C/W ° C/W ° C 18-Dec-2009 Rev. A Page 1 of 28 SMUN5311DW Series Elektronische Bauelemente NPN / PNP Digital Small Signal Transistors ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Cutoff Voltage Collector-Emitter Cutoff Current SMUN5311DW SMUN5312DW SMUN5313DW SMUN5314DW SMUN5315DW Emitter-Base Cutoff Current SMUN5316DW SMUN5330DW SMUN5331DW SMUN5332DW SMUN5333DW SMUN5334DW SMUN5335DW SMUN5311DW SMUN5312DW SMUN5313DW SMUN5314DW SMUN5335DW Collector-Emitter Saturation Voltage SMUN5330DW SMUN5331DW SMUN5315DW SMUN5316DW SMUN5332DW SMUN5333DW SMUN5334DW SMUN5311DW SMUN5312DW SMUN5313DW SMUN5314DW SMUN5315DW DC Current Gain SMUN5316DW SMUN5330DW SMUN5331DW SMUN5332DW SMUN5333DW SMUN5334DW SMUN5335DW Note: 3. Pulse test: pulse width