SS8050

SS8050 Elektronische Bauelemente NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   A L 3 3    Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current ICM : 1.5A Collector - Base Voltage V(BR)CBO : 40V Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ Top View 1 2 CB 1 2 K E D Collector  F G H J  Base REF. A B C D E F MARKING : Y1  Emitter Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 40 25 5 1.5 0.3 150, -55~150 UNIT V V V A W ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency TEST CONDITIONS IC =100µA, IE =0 IC =0.1mA, IB =0 IE =100µA, IC =0 VCB =40V, IE =0 VCB =20V, IE =0 VEB =5V, IC =0 VCE =1V, IC =100mA VCE =1V, IC =800mA IC =800mA, IB =80mA IC =800mA, IB =80mA VCE =10V, IC=50mA,f=30MHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) FT MIN. 40 25 5 MAX. UNIT V V V µA µA µA 120 40 0.1 0.1 0.1 400 0.5 1.2 100 V V MHz CLASSIFICATION OF hFE RANK RANGE MARKING L 120-200 H 200-350 J 300-400 Y1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Oct-2009 Rev. C Page 1 of 2 SS8050 Elektronische Bauelemente NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Oct-2009 Rev. C Page 2 of 2