SS8050T

SS8050T Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon General Purpose Transistor FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A Collector-base voltage TO-92 1 2 3 V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C 2 O O 1 23 1 1. EMITTER 2. BASS 3 . COLLECTOR 3 ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=1V, IC= 800mA IC=800 mA, IB= 80m A IC=800 mA, IB= 80m A VCE=10V, Transition frequency IC= 50mA 100 MHz 40 0.5 1.2 V V Test conditions IE=0 MIN 40 25 5 0.1 0.1 0.1 85 400 TYP MAX UNIT V V V O Ic= 100μA， Ic= 0.1mA， IB=0 IE=100μA， IC=0 VCB=40 V , IE=0 VCE=20V , IB=0 VEB= 5V , IC=0 μA μA μA VCE=1V, IC= 100m A fT f=30MHz CLASSIFICATION OF h FE(1) Rank Range B 85-160 C 120-200 D 160-300 E 300-400 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 SS8050T Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics 0.5 1000 VCE = 1V IC[mA], COLLECTOR CURRENT IB = 3.0mA 0.4 IB = 2.5mA 0.3 hFE, DC CURRENT GAIN 2.0 100 IB = 2.0mA IB = 1.5mA 0.2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 100 IC = 10 IB VCE = 1V VBE(sat) 1000 IC[mA], COLLECTOR CURRENT 10 100 1000 10 100 1 VCE(sat) 10 0.1 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz VCE = 10V Cob [pF], CAPACITANCE 100 100 10 10 1 1 10 100 1 1 10 100 400 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2