SS8050W

Elektronische Bauelemente RoHS Compliant Product NPN Silicon General Purpose Transistor SS8050W FEATURES 3 Collector SOT-323 Dim A B C D Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 3 1 Power dissipation PCM : 0.2 W Collector Current ICM : 1.5 A Collector-base voltage 1 2 Base A L 3 2 Emitter G H J V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C O O Top View 1 2 BS K L S V V G C D H K J All Dimension in mm ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=1V, IC=500mA IC=500 mA, IB= 50m A IC=500 mA, IB= 50m A VCE=6V, Transition frequency I = 20mA C 100 MHz 40 0.5 1.2 V V Test conditions IE=0 MIN 40 25 5 0.1 0.1 0.1 120 350 TYP MAX UNIT V V V O Ic= 100μA， Ic= 0.1mA， IB=0 IE=100μA， IC=0 VCB=40 V , IE=0 VCE=20V , IB=0 VEB= 5V , IC=0 μA μA μA VCE=1V, IC= 50m A fT f=30MHz CLASSIFICATION OF h FE(1) Rank Range Marking : Y1 http://www.SeCoSGmbH.com L 120-200 H 200-350 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 SS8050W Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2