SS8550W

Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor SS8550W FEATURES 3 Collector SOT-323 Dim A B C D Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 3 1 Power dissipation PCM : 0.2 W Collector Current ICM : -1.5 A Collector-base voltage 1 2 Base A L 3 2 Emitter G H J V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C Marking : Y2 D O O Top View 1 2 BS K L S V V G C H K J All Dimension in mm ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency output capacitance VCE(sat) VBE(sat) VCE=-1V, IC=-800mA IC=-800 mA, IB= -80m A IC=-800 mA, IB= -80m A VCE=-10V, IC=-50mA 100 20 40 -0.5 -1.2 V V MHz Test conditions IE=0 MIN -40 -25 -5 -0.1 -0.1 -0.1 120 350 TYP MAX UNIT V V V O Ic= 100μA， Ic=-0.1mA， IB=0 IE=-100μA，IC=0 VCB=-40 V , IE=0 VCE=-20V , IB=0 VEB= -5V , IC=0 μA μA μA VCE=-1V, IC=-100m A fT f=30MHz (VCB=-10V,IE=0,f=1MHz) CLASSIFICATION OF h FE(1) Rank Range http://www.SeCoSGmbH.com L 120-200 H 200-350 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 SS8550W Elektronische Bauelemente PNP Silicon General Purpose Transistor Typical Characteristics -0.5 1000 VCE = -1V IB=-4.0mA IC[mA], COLLECTOR CURRENT -0.4 IB=-3.5mA IB=-3.0mA hFE, DC CURRENT GAIN 100 -0.3 IB=-2.5mA IB=-2.0mA -0.2 IB=-1.5mA IB=-1.0mA 10 -0.1 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10000 -100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC=10IB VCE = -1V -1000 IC[mA], COLLECTOR CURRENT -100 -1000 -10 VBE(sat) -100 -1 VCE(sat) -10 -0.1 -1 -10 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 VCE=-10V Cob[pF], CAPACITANCE 10 100 1 -1 -10 -100 -1000 10 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2