SSCD102 THRU SSCD110
Elektronische Bauelemente
VOLTAGE 20V ~ 100V
1.0 AMP Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
1206
0.142(3.60)
FEATURES
0.083(2.10) 0.067(1.70)
0.126(3.20)
.002(0.05)
.40 )
* * * * * * * * *
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Lo w profile package Built-in strain relief Metal to silicon rectifier , majority carrier conductio n Low power loss , High efficiency High current capability High surge capa city For using in low voltage high frequency switching power supply, inverters , free wheeling , and pol arit y pr otection a pplications
0.063(1.60)
R
1 0.0
6(0
Cathode Band
0.035(0.90) 0.020(0.50) 0.046(1.16) 0.034(0.86) 0.035(0.90) 0.020(0.50)
MECHANICAL DATA
* Dimensions in inches and (millimeters)
* Case : Packed with FRP substrate and epoxy underfilled * Ter m i n al s : Solder plated , solderable per MIL-STD-750, Method 2026 * Polarit y : Lase r marking * Weight : 0.02 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See FIG. 1) Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A (Note1) 。 Maximum DC Reverse Current (Note1) Ta=25 C 。 at Rated DC Blocking Voltage Ta=100 C
Typical Thermal Resistance (Note 2)
SYMBOLS VRRM VRMS VDC I(AV) IFSM VF IR
RθJA RθJL TJ TSTG
SSCD102 20 20 20
SSCD104 40 40 40 1.0 20 0.50 0.5 10
SSCD106 60 60 60
SSCD110 100 100 100
UNITS
V V V A A
0.70 5
88 28 -50 ~ +125 -65 ~ +150
0.85
V mA
℃ /W
Operating Temperature Range Storage Temperature Range NOTES: 1. Pulse test width PW=300 usec, 1% duty cycle. 2. Mounted on P.C. board with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas.
℃ ℃
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SSCD102 THRU SSCD110
Elektronische Bauelemente
VOLTAGE 20V ~ 100V
1.0 AMP Surface Mount Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 30
RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS
SSCD106~SSCD110
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
25 20 15 10 5 0
8.3ms Single Half Sine-Wave (JEDEC Method)
0.5
SSCD102~SSCD104
0
0
50
70
90
110
130
o
150
170
1
10 NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10.00 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES
10
1.00
SSCD102~SSCD104
SSCD110
1.0
TJ=100 C
o
0.10
SSCD106
0.10
0.01
TJ=25 C
o
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 .001 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
400
FIG.5 - TYPICAL JUNCTION CAPACITANCE
TJ = 25 C f=1.0MHz Vsig=50mVP-P
o
JUNCTION CAPACITANCE, pF
100
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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