SSD15N10

SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-252(D-Pack) FEATURES RDS(on) ≦ 100m @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability A B C D GE K HF PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13’ inch N O P M J REF. A B C D E F G H Millimeter Min. Max. 6 .4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0 .8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1 .6 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 Symbol VDS VGS TC=25° C TC=70° C ID IDM TC=25° C TA=25° C PD TJ, TSTG Ratings 100 ±20 15 13.8 60 44.6 2 -55 ~ 150 Unit V V A A A W W ° C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient (PCB 3 mount) http://www.SeCoSGmbH.com/ RθJA RθJC 62.5 ° /W C Maximum Thermal Resistance Junction-Case 2.8 changes of specification will°not /be informed individually. CW Any 25-Apr-2011 Rev. A Page 1 of 4 SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Total Gate Charge 2 2 Symbol BVDSS VGS(th) IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Min. 100 1.0 - Typ. 80 13 4.6 7.6 14 33 39 5 840 115 80 0.9 Max. 2.5 ±100 1 100 - Unit V V nA µA m Test conditions VGS=0, ID=250µA VDS=VGS, ID=250µA VGS= ±20V VDS=80V, VGS=0 VGS=10V, ID=8A Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 nC ID=10A VDS=80V VGS=4.5V nS pF VDS=50V ID= 10A VGS=10V RL= 5Ω RG= 1Ω VGS=0 VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Forward On Voltage 2 VSD - - 1.2 V IS=8.0A, VGS=0V Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test. 3. Surface Mounted on 1 in2 copper pad of FR4 Board. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2011 Rev. A Page 2 of 4 SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2011 Rev. A Page 3 of 4 SSD15N10 Elektronische Bauelemente 15A, 100V, RDS(ON) 100m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Apr-2011 Rev. A Page 4 of 4