SSD20N03

SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Simple Drive Requirement Fast Switching PACKAGE DIMENSIONS REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 Ref. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25℃ ID @TC=100℃ IDM PD @Ta=25℃ Tj, Tstg Ratings 30 ±20 20 13 53 31 0.25 -55 ~ +150 Unit V V A A A W W/℃ ℃ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rθj-case Rθj-amb Value 4.0 110 Unit ℃ /W ℃ /W 01-June-2005 Rev. A Page 1 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) Symbol BVDSS ΔBVDSS /ΔTj VGS(th) gfs IGSS IDSS Min. 30 1.0 - Typ. 0.037 3 6.1 1.4 4 4.9 29 14.3 3.6 290 160 45 Max. 3.0 ±100 1 100 52 85 - Unit V Test Conditions VGS=0, ID= 250uA V /°C Reference to 25°C, ID= 1mA V S nA uA uA mΩ VDS=VGS, ID= 250uA VDS= 10V, ID= 10A VGS= ±20V VDS= 30V, VGS=0 VDS= 24V, VGS= 0 VGS= 10V, ID= 10A VGS= 4.5V, ID= 8A ID= 10 A VDS= 24 V VGS= 5 V VDS=15 V ID= 20 A VGS= 10 V RG= 3.3 Ω RD= 0.75 Ω VGS=0 V VDS=25 V f=1.0 MHz Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)1 Symbol VSD IS ISM Min. - Typ. - Max. 1.3 20 53 Unit V A A Test Conditions IS=20 A, VGS=0 V, TJ = 25°C VD = VG = 0V, VS = 1.3 V Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. 01-June-2005 Rev. A Page 2 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 3 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES (cont’d) 01-June-2005 Rev. A Page 4 of 5 SSD20N03 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 20 A, 30 V, RDS(ON) 52 mΩ CHARACTERISTIC CURVES (cont’d) 01-June-2005 Rev. A Page 5 of 5