SSD20N06-90D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
RoHS Compliant Product A suffix of “-C” specifies halogen free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology
A B
C D
GE
PRODUCT SUMMARY
VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 94 @VGS= 10V 109 @VGS= 4.5V ID(A) 19 18
Drain
M
K J
HF
N O P
Gate
REF.
Source
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
a b a a
SYMBOL VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS
RATINGS 60 ±20 19 40 30 50 -55 ~ 175 50 3.0
UNIT V V A A A W °C °C / W °C / W
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 1 of 4
SSD20N06-90D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD 1.0 34 22 1.1 ±100 1 25 94 109 μA A mΩ S V V VDS = VGS, ID = 250μA
nA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 19A VGS= 4.5V, ID= 18A VDS= 15V, ID= 19A IS= 24A, VGS = 0V
Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Qg Qgs Qgd Td(on) Tr Td(off) Tf Trr 3.6 1.8 1.3 16 5 23 3 50 IF=24A, Di/Dt=100 A/μs VDD= 25 V ID= 24 A RL= 25 nS VGEN= 10 V ID= 19 A nC VDS= 15 V VGS= 4.5 V
Notes a. Pulse test: PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 2 of 4
SSD20N06-90D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 3 of 4
SSD20N06-90D
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS(ON) 94 mΩ
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Aug-2010 Rev. A
Page 4 of 4
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