SSD20P04-60D
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS(ON) 69mΩ
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology..
A B
C D
PRODUCT SUMMARY
VDS(V) -40 PRODUCT SUMMARY RDS(on) m( 69@VGS= -10V 106@VGS= -4.5V
K
GE
HF
ID(A) 22 18
Gate
Drain
M
J
N O P
REF.
Source
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
UNIT
V V A A A W °C °C / W °C / W
VDS VGS ID IDM IS PD TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS
a
-40 ±20 22 ±72 -30 50 -55 ~ 175 50 3.0
Continuous Source Current (Diode Conduction) Total Power Dissipation
Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case
Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A
Page 1 of 4
SSD20P04-60D
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS(ON) 69mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage
SYMBO MIN. TYP. MAX. UNIT Static
VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -41 31 -0.7 ±100 -1 -5 69 106 nA μA A mΩ S V
TEST CONDITIONS
VDS= VGS, ID = -250 μA VDS = 0V, VGS= ±25V VDS= -24V, VGS= 0V VDS= -24V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -22A VGS= -4.5V, ID= -18A VDS= -15V, ID= -22A IS= -41 A, VGS= 0 V
Dynamic b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 10 2.2 2.5 nC VDS = -15 V VGS = -4.5 V ID = -22 A
Switching
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf 10 2.8 53.6 46 nS VDD= -15 V ID= -24 A VGEN = -10 V RL= 15 RG= 6
Notes a. Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A
Page 2 of 4
SSD20P04-60D
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS(ON) 69mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A
Page 3 of 4
SSD20P04-60D
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS(ON) 69mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Aug-2010 Rev. A
Page 4 of 4
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