SSD20P06-135D

SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack) FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY RDS(on) m( 135@VGS= -10V 190@VGS= -4.5V K GE HF ID(A) 16 14  Gate  Drain M J N O P REF.  Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a UNIT V V A A A W °C °C / W °C / W VDS VGS ID IDM IS PD TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS a -60 ±20 16 ±40 -15 50 -55 ~ 175 50 3.0 Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev.B Page 1 of 4 SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage SYMBO MIN. TYP. MAX. UNIT Static VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -20 8 ±100 -1 -10 135 190 -1.2 nA μA A mΩ S V TEST CONDITIONS VDS= VGS, ID = -250 μA VDS = 0V, VGS= ±20V VDS= -48V, VGS= 0V VDS= -48V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -28A VGS= -4.5V, ID= -14A VDS= -15V, ID= -28A IS= -2.5 A, VGS= 0 V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 18 5 2 570 80 40 8 10 35 12 nS pF nC VDS = -30 V VGS = -4.5 V ID = -28 A VDS = -15 V VGS = 0 V f = 1MHz VDD= -30 V ID= -1 A VGEN = -10 V RL= 30  RG= 6  Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev.B Page 2 of 4 SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev.B Page 3 of 4 SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Aug-2010 Rev.B Page 4 of 4