SSD2504

SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD2504 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-252(D-Pack) FEATURES       Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel A B C D GE K HF MARKING Drain REF. M J N O P Gate Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 SYMBOL VDS VGS ID @TC=25℃ ID @TC=100℃ IDM PD @TC=25℃ TJ, TSTG RθJA RθJC RATINGS 100 ±20 5.0 3.75 20 20 0.16 -55 ~ 150 110 6.25 UNIT V V A A A W W / °C °C °C / W °C / W Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambienta Maximum Thermal Resistance Junction-Case THERMAL DATA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 1 of 4 SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Dran-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Td(on) Tr Td(off) Tf CISS COSS CRSS MIN. 100 1.0 TYP. 4 9.0 9.4 26.8 2.6 975 38 27 MAX. UNIT TEST CONDITIONS 2.5 ±100 10 0.22 0.28 V V S VGS= 0, ID= 1mA VDS= 10V, ID = 1mA VDS= 10V, ID= 2.5A nA VGS= ±20V μA VDS= 100V, VGS= 0V Ω VGS= 10V, ID= 2.5A VGS= 4.0V, ID= 2.5A VDD= 30 V ID= 1 A nS VGS = 10 V RL= 30  RG= 6  VGS = 0 V pF VDS = 25 V f = 1MHz SOURCE-DRAIN DIODE Diode Forward Voltage 2 VSD - - 1.5 V IS= 5 A, VGS= 0 V Notes： 1. Pulse width limited by maximum junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 2 of 4 SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 3 of 4 SSD2504 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-May-2010 Rev. A Page 4 of 4