SSD3055

SSD3055 Elektronische Bauelemente 15A, 30V,RDS(ON)26 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSD3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications TO-252 such as DC/DC converters. Features *Low Gate Charge *Fast Switching *Simple Drive Requirement D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VD S VG S ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 30 ± 20 15 9 50 28 0.22 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 4.8 110 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2006 Rev. B Page 1 of 5 SSD3055 Elektronische Bauelemente 15A, 30V,RDS(ON)26mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics ( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance o o o Unless otherwise specified) Min. 30 _ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=8 A VGS=4.5V, ID=6 A o 0.037 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 26 40 _ _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 4.6 1.1 3 4.9 22.5 12.2 3.3 160 107 32 16 nC ID=8 A VDS=24V VGS= 5V _ _ _ _ VDD=15V ID=8A nS VGS=10V RG=3.4Ω RD=1.9 Ω _ _ _ _ pF VGS=0V VDS=25V f=1.0MHz S VDS=10V,ID=18A Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1 .3 Unit V A A Test Condition IS=15 A, VGS=0V.Tj=25C VD=VG=0V,VS=1.3 V o 15 50 ISM _ Notes: 1.Pulse width limited by safe operating area. 2. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ 01 -Jun-2006 Rev. B Any changing of specification will not be informed individual Page 2 of 5 SSD3055 Elektronische Bauelemente 15A, 30V,RDS(ON)26 mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics 45 Fig 2. Typical Output Characteristics 40 35 30 25 20 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current http://www.SeCoSGmbH.com/ v.s. Case Temperature 01-Jun-2006 Rev. B Fig 6. Type Power Dissipation Any changing of specification will not be informed individual Page 3 of 5 SSD3055 Elektronische Bauelemente 15A, 30V,RDS(ON)26 mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 12. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2006 Rev.B Page 4 of 5 SSD3055 Elektronische Bauelemente 15A, 30V,RDS(ON)26 mΩ N-Channel Enhancement Mode Power Mos.FET Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform http://www.SeCoSGmbH.com/ 01-Jun-2006 Rev. B Any changing of specification will not be informed individual Page 5 of 5