SSD30N06-39D

SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES     Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B C D GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 38 @VGS= 10V 50 @VGS= 4.5V ID(A) 30 26  Drain M K J HF N O P  Gate REF.  Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a a SYMBOL VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS RATINGS 60 ±20 19 40 30 50 -55 ~ 175 50 3.0 UNIT V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. A Page 1 of 4 SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD 1.0 34 22 1.1 ±100 1 25 38 50 μA A mΩ S V V VDS = VGS, ID = 250μA nA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 30A VGS= 4.5V, ID= 26A VDS= 15V, ID= 30A IS= 24A, VGS = 0V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 12.5 2.4 2.6 11 8 19 6 VDD= 25 V ID= 30 A nS R = 25  L VGEN= 10 V ID= 30 A nC VDS= 15 V VGS= 4.5 V Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. A Page 2 of 4 SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. A Page 3 of 4 SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Aug-2010 Rev. A Page 4 of 4