SSD30N10-50D

SSD30N10-50D Elektronische Bauelemente 26A, 100V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. TO-252(D-Pack) FEATURES     Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-252 saves board space Fast switching speed High performance trench technology A B C D GE APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. M K J HF N O P REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K LeaderSize 13’ inch A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 2 1 1 Symbol VDS VGS TC=25℃ ID IDM IS PD TJ, TSTG RθJA RθJC TC=25℃ Ratings 100 ±20 20 36 30 50 -55 ~ 175 50 3.0 Unit V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Thermal Resistance Ratings Any changes of specification will not be informed individually. 04-Mar-2011 Rev. A Page 1 of 2 SSD30N10-50D Elektronische Bauelemente 26A, 100V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD Min. Static 1.0 34 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 2 Typ. 4.4 1.1 Max. ±100 1 25 50 59 - Unit V nA μA A mΩ S V Test conditions VDS=VGS, ID=250μA VDS=0, VGS=20V VDS=80V, VGS=0 VDS=80V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=9.2A VGS=4.5V, ID=6.1A VDS=40V, ID=5.5A IS=9A, VGS=0 25 5 19 9 15 45 39 nS nC ID= 9 A VDS= 25 V VGS= 10 V VDD=100V ID= 9A RL= 25 VGEN= 10V Notes: 1. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. A Page 2 of 2