SSD30N10-70D

SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) KEY FEATURES    Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications     PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters While LED boost converters A B C D PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 100 RDS(on) m( 78 @VGS= 10V 92 @VGS= 4.5V ID(A) 21 19  Gate K M J GE HF  Drain N O P REF.  Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambienta Maximum Thermal Resistance Junction-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. b SYMBOL VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS RATINGS 100 ±20 21 100 30 50 -55 ~ 175 50 3.0 UNIT V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Aug-2010 Rev. A Page 1 of 4 SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf 21 3.8 14.2 7.5 13.6 41 35 ID= 9 A nC VDS= 50 V VGS= 4.5 V 1.0 34 20 0.8 ±10 1 25 78 92 μA A mΩ S V V VDS = VGS, ID = 250μA μA VDS= 0V, VGS= 20V VDS= 80V, VGS= 0V VDS= 80V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 9.2A VGS= 4.5V, ID= 6.1A VDS= 40V, ID= 5.5A IS= 9A, VGS = 0V VDD= 50 V ID= 9.6 A nS RL= 5.2  VGEN= 10 V RGEN= 6  Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Aug-2010 Rev. A Page 2 of 4 SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Aug-2010 Rev. A Page 3 of 4 SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Aug-2010 Rev. A Page 4 of 4