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SSD408

SSD408

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    SSD408 - N-Channel Enhancement Mode Power Mos.FET - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
SSD408 数据手册
SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. F ea t u r es * Simple Drive Requirement * Lower On-resistance * Fast Switching Characteristic D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : ID M PD @TC=25 : 2 Ratings 30 ±20 18 14 70 60 0.4 60 35 -55 ~ +175 Unit V V A A A W W/ : mJ A : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Tem perature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit : /W : /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current DrainSource Leakage Current(Tj=25 : ) Source Leakage Current(Tj=25 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 1.0 - Typ. 25 19.8 2.5 3.5 4.5 3.9 17.4 3.2 1040 180 110 Max. 2.5 ±100 1 5 18 27 25 1250 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=18A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=10A ID=18A VDS=15V VGS=10V VDS=15V VGS=10V RG=3 RL=0.82 VGS=0V VDS=15V f=1.0MHz Drain-Source Leakage Current(Tj=55 : ) Static Drain-Source On-Resistance3 Total Gate Charge 3 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Rev erse Transf er Capacitance 3 nC ns pF Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body D iode) Symbol VSD IS T rr Q rr Min. - Typ. 19 8 Max. 1.0 18 - Unit V A ns nC Test Conditions IS=1A, VGS=0V Rev erse Recov ery Time 3 Rev erse Recov ery Charge IS=18A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by saf e operating area. 2. Staring Tj=25 : , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage 1010 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.1 .1 0 0. 0.01 0.001 0.0 0.0001 0.0 0.0000101 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation Any changing of specification will not be informed individual Page 3 of 4 SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0 . 0 0 0 01 0 0001 0..000 1 0 ..0 0 1 0 001 0.01 0011 .. 1 1 10 10 10 0 1 000 1 000 Fig 11. Normalized Maximum Transient Thermal Impedance http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4
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