SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
TO-252
The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications.
F ea t u r es
* Simple Drive Requirement * Lower On-resistance
* Fast Switching Characteristic
D
REF. A B C D E F S
G
S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=100 : ID M PD @TC=25 :
2
Ratings 30 ±20 18 14 70 60 0.4 60 35 -55 ~ +175
Unit V V A A A W W/ : mJ A :
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS IAS Tj, Tstg
Single Pulse Avalanche Current
Operating Junction and Storage Tem perature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 50 Unit : /W : /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
DrainSource Leakage Current(Tj=25 : ) Source Leakage Current(Tj=25 : )
Symbol BVDSS VGS(th) gfs IGSS IDSS
Min. 30 1.0 -
Typ. 25 19.8 2.5 3.5 4.5 3.9 17.4 3.2 1040 180 110
Max. 2.5 ±100 1 5 18 27 25 1250 -
Unit V V S nA uA uA m
Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=18A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=10A ID=18A VDS=15V VGS=10V VDS=15V VGS=10V RG=3 RL=0.82 VGS=0V VDS=15V f=1.0MHz
Drain-Source Leakage Current(Tj=55 : )
Static Drain-Source On-Resistance3 Total Gate Charge
3
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Rev erse Transf er Capacitance
3
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage3
Continuous Source Current (Body D iode)
Symbol VSD IS T rr Q rr
Min. -
Typ. 19 8
Max. 1.0 18 -
Unit V A ns nC
Test Conditions IS=1A, VGS=0V
Rev erse Recov ery Time
3
Rev erse Recov ery Charge
IS=18A, VGS=0V dI/dt=100A/ s
Notes: 1. Pulse width limited by saf e operating area. 2. Staring Tj=25 : , VDD=25V, L=0.1mH, RG=25 . 3. Pulse width 300us, duty cycle 2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
1010
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1
0.1 .1 0
0. 0.01
0.001 0.0
0.0001 0.0
0.0000101
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01-Jun-2002 Rev. A
Fig 5. Maximum Drain Current v.s. Case Temperature
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page 3 of 4
SSD408
Elektronische Bauelemente 18A, 30V,RDS(ON)18mΩ N-Channel Enhancement Mode Power Mos.FET
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0 . 0 0 0 01
0 0001 0..000 1
0 ..0 0 1 0 001
0.01
0011 ..
1 1
10 10
10 0
1 000 1 000
Fig 11. Normalized Maximum Transient Thermal Impedance
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 4
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