SSD40N04-20D

SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B FEATURES     C D Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC Converter applications. M GE K J HF N O P PRODUCT SUMMARY VDS(V) 40 PRODUCT SUMMARY RDS(on) m( 22@VGS= 10V 27@VGS= 4.5V ID(A) 39 36 REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a UNIT V V A A A W °C °C / W °C / W VDS VGS ID @TA=25℃ IDM IS PD @TA=25℃ TJ, TSTG RθJA RθJC a 40 ±20 39 40 30 50 -55 ~ 175 50 3.0 Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. THERMAL RESISTANCE RATINGS http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Sep-2010 Rev.C Page 1 of 4 SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage Pulsed Source Current (Body Diode) a Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL MIN. TYP. MAX. UNIT Static VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD ISM 1.0 34 22 1.1 5 ±100 1 25 22 27 V nA μA A mΩ S V A TEST CONDITIONS VDS= VGS, ID = 250 μA VDS = 0V, VGS= 20V VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID= 39 A VGS= 4.5V, ID= 36 A VDS= 15V, ID= 39 A IS= 34 A, VGS= 0 V Dynamic b Qg Qgs Qgd Ciss Coss Td(on) Tr Td(off) Tf 20 7 7 1317 272 16 5 23 3 nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25  pF nC VDS = 15 V VGS = 4.5 V ID = 39 A VDS = 15 V VGS = 0 V f = 1MHz Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Sep-2010 Rev.C Page 2 of 4 SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Sep-2010 Rev.C Page 3 of 4 SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Sep-2010 Rev.C Page 4 of 4