SSD40N10-30D

SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack) APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. W hite LED boost converters. A B C D GE PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13’ inch A B C D E F G H M REF. K HF N O P J Millimeter Min. Max. 6 .4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0 .8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1 .6 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25℃ Pulsed Drain Current 2 1 1 Symbol VDS VGS ID IDM IS PD TJ, TSTG Rating 100 ±20 26 50 50 50 -55 ~ 175 Unit V V A A A W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation @TC=25℃ 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 RθJA RθJC 50 3.0 ° /W C ° /W C 04-May-2011 Rev.A Page 1 of 4 SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol Min. Typ. Max. Unit V nA µA Teat Conditions VDS=VGS, ID = 250µA VDS=0, VGS=20V VDS=80V, VGS=0 VDS=80V, VGS=0, TJ=55° C Static VGS(th) IGSS IDSS ID(on) 1 1.0 34 - 10 0.89 2 3.5 ±100 1 25 36 A m VDS=5V, VGS=10V VGS=10V, ID=10 A VGS=4.5V, ID=9.2 A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - 42 S V VDS=15V, ID=10 A IS=25A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 14.8 4.3 8.6 4.8 14.2 39.2 25.6 1216 154 131 nS nC VDS=50V VGS=4.5V ID=10 A VDD= 50V RL=5Ω ID=10 A VGEN=10V RGEN=6Ω pF - VDS=15V VGS=0 f=1MHz Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2011 Rev.A Page 2 of 4 SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2011 Rev.A Page 3 of 4 SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-May-2011 Rev.A Page 4 of 4