SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-252 saves board space. Fast Switch Speed. High performance trench technology.
A B C D
GE
K
HF
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
N O P
M
J
REF.
PACKAGE INFORMATION
Package TO-252 MPQ 2.5K Leader Size 13 inch
A B C D E F G H
Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
1 2 1
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
Ratings
-40 ±20 -36 -40 -30 50 -55 ~ 175
Unit
V V A A A W ° C
Pulsed Drain Current @TA=25° C
Continuous Source Current (Diode Conduction) Total Power Dissipation @TA=25° C
1
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case
Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature.
1
RθJA RθJC
50 3
° /W C ° /W C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A
Page 1 of 4
SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
1
Symbol
VGS(th) IGSS IDSS ID(on)
1
Min. Static
-1 -41 -
Typ.
31 -0.7
2
Max.
±100 -1
Unit
V nA µA
Teat Conditions
VDS= VGS, ID = -250µA VDS =0, VGS= ±25V VDS= -24V, VGS=0 VDS= -24V, VGS=0, TJ=55° C
-5 30 m 40 S V A
VDS = -5V, VGS= -10V VGS= -10V, ID= -36A VGS= -4.5V, ID= -29A VDS= -15V, ID= -36A IS= -41A, VGS=0
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
1
RDS(ON) gfs VSD
-
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf -
13.9 5.2 5.8 1583 278 183 15 12 62 46
30 20 20 4000 600 400 nS pF nC
VDS= -15V VGS= -4.5 V ID= -36A VDS= -15V, VGS=0, f=1MHz VDD= -15V ID= -41A VGEN = -10 V RL=15 RG=6
Notes: 1. Pulse test:Pulse width ≦ 300 µs, duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A
Page 2 of 4
SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A
Page 3 of 4
SSD40P04-20DE
Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
2-Dec-2011 Rev. A
Page 4 of 4
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