SSD40P04_11

SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. TO-252(D-Pack) FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-252 saves board space. Fast Switch Speed. High performance trench technology. A B C D GE K HF APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N O P M J REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 2 1 Symbol VDS VGS ID IDM IS PD TJ, TSTG Ratings -40 ±20 -36 -40 -30 50 -55 ~ 175 Unit V V A A A W ° C Pulsed Drain Current @TA=25° C Continuous Source Current (Diode Conduction) Total Power Dissipation @TA=25° C 1 Operating Junction and Storage Temperature Range Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. 1 RθJA RθJC 50 3 ° /W C ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2-Dec-2011 Rev. A Page 1 of 4 SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) 1 Min. Static -1 -41 - Typ. 31 -0.7 2 Max. ±100 -1 Unit V nA µA Teat Conditions VDS= VGS, ID = -250µA VDS =0, VGS= ±25V VDS= -24V, VGS=0 VDS= -24V, VGS=0, TJ=55° C -5 30 m 40 S V A VDS = -5V, VGS= -10V VGS= -10V, ID= -36A VGS= -4.5V, ID= -29A VDS= -15V, ID= -36A IS= -41A, VGS=0 Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf - 13.9 5.2 5.8 1583 278 183 15 12 62 46 30 20 20 4000 600 400 nS pF nC VDS= -15V VGS= -4.5 V ID= -36A VDS= -15V, VGS=0, f=1MHz VDD= -15V ID= -41A VGEN = -10 V RL=15  RG=6 Notes: 1. Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2-Dec-2011 Rev. A Page 2 of 4 SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2-Dec-2011 Rev. A Page 3 of 4 SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2-Dec-2011 Rev. A Page 4 of 4