SSD50N06-15D

SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B FEATURES     C D Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TO-252 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications K GE HF PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 13 @VGS= 10V 18 @VGS= 4.5V M J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 N O P ID(A) 51 44 REF. REF. A B C D E F G H J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation a b a a SYMBOL VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC THERMAL RESISTANCE RATINGS RATINGS 60 ±20 51 40 30 50 -55 ~ 175 50 3.0 UNIT V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient a Maximum Thermal Resistance Junction-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Sep-2010 Rev. B Page 1 of 4 SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VSD 1.0 34 22 1.1 ±100 1 25 13 18 μA A mΩ S V V VDS = VGS, ID = 250μA nA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 51A VGS= 4.5V, ID= 44A VDS= 15V, ID= 51A IS= 24A, VGS = 0V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Change Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Ciss Coss Crss Td(on) Tr Td(off) Tf 12.5 2.4 2.6 2730 440 180 11 8 19 6 VDD= 25 V nS ID= 30 A RL= 25  VGEN= 10 V ID= 51 A nC VDS= 15 V VGS= 4.5 V f = 1MHz pF VDS= 15 V VGS= 0 V Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Sep-2010 Rev. B Page 2 of 4 SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Sep-2010 Rev. B Page 3 of 4 SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 27-Sep-2010 Rev. B Page 4 of 4