SSD50P06-15D

SSD50P06-15D Elektronische Bauelemente 61A, -60V, RDS(ON) 17mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss and conserves energy, making thisdevice ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. TO-252(D-Pack) FEATURES     A B Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. K M J C D GE HF PACKAGE INFORMATION Package TO-252 MPQ 2.5K LeaderSize 13’ inch N O P REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 VDS VGS ID @TA=25℃ IDM IS PD @TA=25℃ TJ, TSTG RθJA RθJC Thermal Resistance Ratings 1 -60 ±20 61 ±40 -30 50 -55 ~ 175 50 3.0 V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) Total Power Dissipation Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Dec-2010 Rev.B Page 1 of 2 SSD50P06-15D Elektronische Bauelemente 61A, -60V, RDS(ON) 17mΩ P-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Static Typ. Max. Unit Teat Conditions Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD -1 -20 Dynamic 2 8 - ±100 -1 -10 17 23 -1.2 nA μA A mΩ S V VDS= VGS, ID = -250 μA VDS = 0V, VGS= ±20V VDS= -48V, VGS= 0V VDS= -48V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -45A VGS= -4.5V, ID= -39A VDS= -15V, ID= -45A IS= -2.5 A, VGS= 0 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 46 18 41 20 20 205 90 nS nC VDS = -30 V VGS = -4.5 V ID = -45 A VDD= -30 V ID= -1 A VGEN = -10 V RL= 30  RG= 6  Notes: 1. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 20-Dec-2010 Rev.B Page 2 of 2