SSD55N03_11

SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SID55N03 provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. TO-252(D-Pack) FEATURES Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching A B C D GE K HF MARKING 55N03 Date Code 2 Drain N O P M J 1 Gate REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K LeaderSize 13’ inch 3 Source A B C D E F G H Millimeter Min. Max. 6 .4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0 .8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1 .6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM PD Rating 25 ±20 55 35 215 62.5 0.5 Unit V V A A A W W/° C mJ A ° C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 2 EAS IAS TJ, TSTG 240 31 -55~150 Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case RθJA RθJC 110 2.0 ° /W C ° /W C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 1 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Static Dran-Source Breakdown Voltage BVDSS 25 1.0 IDSS TJ =150° C Static Drain-Source On-Resistance Total Gate Charge 3 3 Typ. Max. Unit Teat Conditions 0.037 30 4.5 7 16.8 6.0 4.9 15.1 4 45.2 7.6 2326 331 174 3.0 ±100 1 25 6 V V/° C V S nA µA µA m VGS=0, ID= 250µA Reference to 25° C, ID=1mA VDS=VGS, ID=250µA VDS=10V, ID=28A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A ID=28A VDS=20V VGS=5V Breakdown Voltage Temperature Coefficient △BVDSS /△TJ Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current TJ =25° C Drain-Source Leakage Current VGS(th) gfs IGSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf CISS COSS CRSS - 9 nS pF nC Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 VDS=15 V ID=28 A VGS=10V RG=3.3 RD=0.53 VGS =0 VDS=25 V f =1.0MHz Source-Drain Diode Diode Forward Voltage 3 VSD IS - - 1.5 55 V A IS=20A, VGS=0, TJ=25° C VD=VG=0, VS=1.5V Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Staring TJ=25° V DD=20V, L=0.1mH, RG=25, IAS=10A. C, 3. Pulse width ≦ 300 µs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 2 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 3 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 16-Jun-2011 Rev. A Page 4 of 4