SSD70N04-06D

SSD70N04-06D Elektronische Bauelemente 75A, 40V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. TO-252(D-Pack) A B C D FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC converter applications. GE K M J HF N O P REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K LeaderSize 13’ inch A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC Thermal Resistance Ratings Ratings 40 ±20 75 40 30 50 -55 ~ 175 50 3.0 Unit V V A A A W °C °C / W °C / W Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev.A Page 1 of 2 SSD70N04-06D Elektronische Bauelemente 75A, 40V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 1.0 34 22 1.1 ±100 1 25 6 8 V nA μA A mΩ S V VDS=VGS, ID=250μA VDS=0V, VGS=20V VDS=32V, VGS=0V VDS=32V, VGS=0V, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=75A VGS=4.5V, ID=65A VDS=15V, ID=75A IS= 34A, VGS= 0V Typ. Max. Unit Test conditions Dynamic 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time Qg Qgs Qgd Td(on) Tr Td(off) Tf TRR 4.0 1.1 1.4 16 5 23 3 50 IF=34A, Di/Dt =100A/uS nS VDD=25V ID=34 A VGEN=10V RL=25 nC VDS= 15V VGS= 4.5V ID= 75A Notes： 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Jan-2011 Rev.A Page 2 of 2