SSD9575

SSD9575 Elektronische Bauelemente -15A, -60V,RDS(ON)90 m Ω P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD9575 provide the designer with the best combination of fast switching, ruggerized device device design, low on-resistance and cost -effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Featur es * Low On-Resistance * Simple Drive Requirement * Fast Switching D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VDS VG S ID@TC=25 C ID@TC= 100 C I DM PD@TC=25 C o o o Ratings -60 ± 25 -15 -9.5 -45 36 0.29 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 3.5 110 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSD9575 Elektronische Bauelemente -15A, -60V,RDS(ON)90 m Ω P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 60 _ Typ. _ - 0.06 _ _ _ _ _ _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-2 50uA Reference to 25 C, ID=- 1mA VDS=VGS, ID=- 250uA VGS=±25V VDS=-6 0V,VGS=0 VDS=-4 8V,VGS=0 VGS=-1 0V, ID=-12A VGS=- 4.5V, ID=- 9A o _ -1.0 _ _ _ _ -3.0 ±100 -1 -25 90 120 27 _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 17 5 6 10 19 46 53 1660 160 100 14 nC ID=-9A VDS=-48V VGS=-4.5V _ _ _ _ VDD=-30V ID=-9A nS VGS=-10 V RG=3.3 Ω RD=3. 3Ω 2660 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=-1 0V, ID=-9A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Min. _ _ Typ. _ Max. - 1 .2 _ _ Unit V nS nC Test Condition IS=-9 A, VGS=0V. IS=-9 A, VGS=0V. dl/dt=100A/us 56 1 59 Reverse Recovery Change Qrr _ Notes: 1.Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSD9575 Elektronische Bauelemente -15A, -60V,RDS(ON)90 m Ω P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSD9575 Elektronische Bauelemente -15A, -60V,RDS(ON)90 m Ω P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4