SSD95N03

SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD95N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available A B C D GE K HF N O P MARKING 95N03 Date Code M J REF. PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch A B C D E F G H Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 4 1 Symbol VDS VGS Rating 30 ±20 96 88 192 62.5 0.42 Unit V V A A A W W/° C mJ A ° C VGS=10V, TC=25° C VGS=10V,TC=100° C ID IDM Total Power Dissipation Linear Derating Factor TC=25° C PD Single Pulse Avalanche Energy Single Pulse Avalanche Current 3 EAS IAS TJ, TSTG 317 53.8 -55~175 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case http://www.SeCoSGmbH.com/ 1 1 RθJA RθJC 62 2.4 ° /W C ° /W C Any changes of specification will not be informed individually. 24-Nov-2011 Rev. A Page 1 of 4 SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Static Drain-Source Breakdown Voltage BVDSS 30 1.0 IDSS TJ =55° C Static Drain-Source On-Resistance Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Typ. Max. Unit Teat Conditions 0.0213 26.5 3.4 5.2 31.6 8.6 11.7 9 19 58 15.2 3075 400 315 2.5 ±100 1 V V/° C V S nA µA VGS=0, ID=250µA Reference to 25° C, ID=1mA VDS=VGS, ID=250µA VDS=5V, ID=30A VGS= ±20V VDS=24V, VGS=0 V DS=24V, VGS=0 VGS=10V, ID=30A Breakdown Voltage Temperature Coefficient △BVDSS /△TJ Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current TJ =25° C Drain-Source Leakage Current VGS(th) gfs IGSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 5 4 m 6 nS 4000 530 pF nC VGS=4.5V, ID=15A ID=15A VDS=15V VGS=4.5V VDD=15 V ID=15A VGS=10V RG=3.3 VGS =0 VDS=15 V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 98 - - mJ VDD=25V,L=0.1mH , IAS=30A Source-Drain Diode Diode Forward Voltage 2 1,6 VSD IS ISM - - 1.2 96 192 V A IS=30A, VGS=0 VD=VG=0, Force Current Continuous Source Current Pulsed Source Current 2,6 A Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width≦300µs , duty cycle≦2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4. The power dissipation is limited by 175° junct ion temperature C 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Nov-2011 Rev. A Page 2 of 4 SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Nov-2011 Rev. A Page 3 of 4 SSD95N03 Elektronische Bauelemente 96A , 30V , RDS(ON) 4m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Nov-2011 Rev. A Page 4 of 4