SSE110N03-03P

SSE110N03-03P Elektronische Bauelemente 110A , 30V , RDS(ON) 2.5mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R T FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switching speed. High performance trench technology. G E A S F H I J K L U X M P APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D2 Q N O V Q W 123 REF. A B C D E F G H J K L M Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 G1 S3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TC= 25°C ID IDM IS TC= 25°C PD TJ, TSTG Ratings 30 ±20 110 390 110 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient Maximum Junction to Case Notes 1. Package Limited. 2. Pulse width limited by maximum junction temperature. 1 RθJA 62.5 RθJC 0.5 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Nov-2011 Rev. A Page 1 of 2 SSE110N03-03P Elektronische Bauelemente 110A , 30V , RDS(ON) 2.5mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol Min. Typ. Max. Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=20V VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55°C Static VGS(th) IGSS IDSS ID(on) 1 1 120 - 30 1.1 2 ±100 1 25 2.5 A m VDS=5V, VGS=10V VGS=10V, ID=30A VGS=4.5V, ID=20A Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 RDS(ON) gfs VSD - 4 S V VDS=15V, ID=30A IS=34A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 70 16 30 16 27 240 80 nS nC VDS=15V, VGS=4.5V, ID=90A VDD=25V, VGEN=10V, RL=25 , ID=34A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Nov-2011 Rev. A Page 2 of 2