SSE90N06-30P

SSE90N06-30P Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C TO-220P B R E G A T S TYPICAL APPLICATIONS     Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal impedance copper leadframe TO-220P saves board space. Fast Switch speed. High performance trench technology. F H I J K L X M U P N PRODUCT SUMMARY SSE90N06-30P VDS(V) 60 RDS(on) (m 26.5@VGS= 10V 32.5@VGS= 4.5V N-Channel D2 O V ID(A) 87 1 Q 123 Q W Dimensions in millimeters REF. A B C D E F G H J K L M Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 G1 S3 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum Unit V V A A A W °C TC= 25°C TC= 25°C 60 ±20 87 240 90 300 -55 ~ 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 Maximum Junction to Case Notes 1 2 Package Limited. Pulse width limited by maximum junction temperature. Any changes of specification will not be informed individually. Symbol RJA RJC Maximum 62.5 0.5 Unit °C / W http://www.SeCoSGmbH.com/ 29-Nov-2010 Rev. A Page 1 of 2 SSE90N06-30P Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 87 A, 60 V, RDS(ON) 26.5 m ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage Symbol Min. VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 1 120 - Typ. Max. 30 1.1 ±100 1 Unit V nA uA Test Conditions VDS=VGS, ID= 250uA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V VDS= 48V, VGS= 0V, TJ= 55°C 25 26.5 mΩ 32.5 S V A VDS = 5V, VGS= 10V VGS= 10V, ID= 30A VGS= 4.5V, ID= 20A VDS= 15V, ID= 30A IS= 34A, VGS= 0V DYNAMIC 2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes 1 2 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Td(on) Tr Td(off) Tf - 8.5 3.3 4.0 18 59 37 9 nS VDD= 25V, VGEN= 10V, RL= 25, ID= 34A nC VDS= 15V, VGS= 4.5V, ID= 90A http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Nov-2010 Rev. A Page 2 of 2