SSE90N08-08

SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P FEATURES Low RDS(on) trench technology. Low thermal impedance Fast Switch Speed. E G D C B R T A S APPLICATIONS W hite LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits H F J K L I U X M P N O V Q Q W 123 N-Channel D2 REF. A B C D E F G H I J K L G1 S3 Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C ID IDM IS TA=25°C PD TJ, TSTG Ratings 80 ±20 90 350 120 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10sec RθJA Steady State 62.5 °C / W 0.5 Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Dec-2011 Rev. A Page 1 of 4 SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Symbol Min. Typ. Max. Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=±20V VDS=64V, VGS=0 VDS=64V, VGS=0, TJ=55°C Static VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD 1 45 40 0.9 ±100 1 25 11 m 13 S V A VDS=5V, VGS=10V VGS=10V, ID=45A VGS=4.5V, ID=44A VDS=15V, ID=45A IS=60A, VGS=0 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss 58 14 39 19 45 178 62 4021 449 440 nS pF VDS=15V,VGS=0, f =1MHz VDS=40V, VGEN=10V, RL=2 , ID=20A , RGEN=6 nC VDS=40V, VGS=4.5V, ID=20A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Dec-2011 Rev. A Page 2 of 4 SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Dec-2011 Rev. A Page 3 of 4 SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 14-Dec-2011 Rev. A Page 4 of 4