SSE90N10-14

SSE90N10-14 Elektronische Bauelemente 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R FEATURES  E G A T S    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. F H I J K L X M U P N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. N-Channel D2 Q O V 123 Q W REF. A B C D E F G H I J K L G1 S3 Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 1 Symbol VDS VGS TC=25°C ID IDM IS PD TJ, TSTG Ratings 100 ±20 90 240 90 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 TC=25°C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient Maximum Junction to Case Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature. 1 RθJA RθJC 62.5 0.5 °C / W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Dec-2011 Rev. B Page 1 of 4 SSE90N10-14 Elektronische Bauelemente 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 180 - Typ. 40 0.9 2 Max. ±100 1 25 16 19 - Unit V nA μA A mΩ S V Teat Conditions VDS=VGS, ID=250μA VDS=0, VGS=±25V VDS=80V, VGS=0 VDS=80V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=30A VGS=5.5V, ID=20A VDS=15V, ID=20A IS=45A, VGS=0 Static Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf - 4221 392 364 60 19 39 25 49 111 44 nS nC pF VDS=15V, VGS=0, f=1 MHz VDS=50V, VGS=5.5V, ID=20A VDS=50V, VGEN=10V, RL=2.5Ω, ID=20A RGEN=6Ω Notes: 1 Pulse test：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Dec-2011 Rev. B Page 2 of 4 SSE90N10-14 Elektronische Bauelemente 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Dec-2011 Rev. B Page 3 of 4 SSE90N10-14 Elektronische Bauelemente 90A , 100V , RDS(ON) 16m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Dec-2011 Rev. B Page 4 of 4