SSE90P06-08P
Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
D
C
TO-220P
B
R
T
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology.
G
E
A
S
F
H
I
J
K
L
U
X
M
P
APPLICATION
DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
P-Channel D2
Q
N
O
V
Q
W
123
REF. A B C D E F G H I J K L Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 14.7 15.3 1.60 Typ. 1.10 1.30 1.17 1.37 REF. M N O P Q R S T U V W X Millimeter Min. Max. 1.50 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60
G1 S3
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
2 1 1
Symbol
VDS VGS TC=25°C ID IDM IS TC=25°C PD TJ, TSTG
Ratings
-60 ±20 -90 -390 -110 300 -55~175
Unit
V V A A A W °C
Continuous Source Current (Diode Conduction) Power Dissipation
1
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient Maximum Junction to Case
Notes: 1 Package Limited. 2 Pulse width limited by maximum junction temperature.
1
RθJA RθJC
62.5 °C / W 0.5
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 1 of 2
SSE90P06-08P
Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
1
Symbol
Min.
Typ.
Max.
Unit
V nA µA
Teat Conditions
VDS=VGS, ID= -250µA VDS=0, VGS= -20V VDS= -48V, VGS=0 VDS= -48V, VGS=0, TJ=55°C
Static
VGS(th) IGSS IDSS ID(on)
1
-1 -120 -
30 -1.1
2
±100 -1 -25 12
A m
VDS= -5V, VGS= -10V VGS= -10V, ID= -2A VGS= -4.5V, ID= -2A
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
1
RDS(ON) gfs VSD
-
14 S V
VDS= -15V, ID= -2A IS= -2A, VGS=0
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf -
100 30 40 20 20 300 100
nS nC
VDS= -15V, VGS= -4.5V, ID= -2A VDD= -25V, VGEN= -10V, RL=25 , ID= -34A
Notes: 1 Pulse test:PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2011 Rev. A
Page 2 of 2
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