SSE9575

SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET DESCRIPTION The SSE9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4. 80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.17 13.25 2.60 3.71 2.60 1.45 1.47 14.25 2.89 3.96 2.80 2.54 REF. ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current ,VGS@ 10V Drain Current ,VGS@ 10V Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Range 1, 3 3 Symbol VDS VGS ID @Ta=25℃ ID @Ta=100℃ IDM PD @Ta=25℃ Tj, Tstg Ratings -60 ±25 -15 -9.5 -45 36 -55 ~ +150 0.29 Unit V V A A A W ℃ W/℃ Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rθj-case Rθj-amb Value 3.5 125 Unit ℃ /W ℃ /W 01-June-2003 Rev. A Page 1 of 4 SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=150℃) △ Symbol BVDSS BVDSS/△Tj Min. -60 -1.0 - Typ. -0.04 7 17 5 6 10 19 46 53 1660 160 100 Max. -3.0 ±100 -1 -25 90 120 27 2660 - Unit V Test Conditions VGS=0, ID=250uA V/℃ Reference to 25℃, ID=-1mA V S nA uA uA mΩ VDS=VGS, ID=250uA VDS=-15V, ID=-3.5A VGS= ±25V VDS=-60V, VGS=0 VDS=-48V, VGS=0 VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A ID=-9A VDS=-48V VGS=-4.5V VDS=-30V ID=-9A VGS=-10V RG=3.3Ω RD=3.3Ω VGS=0V VDS=-25V f=1.0MHz VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr IS Min. - Typ. 56 159 Max. -1.2 - Unit V ns nC Test Conditions IS=1.7A, VGS=0, Tj=25℃ IS = -9A, VGS = 0V, dl/dt = 100A/us Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%. 01-June-2003 Rev. A Page 2 of 4 SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET CHARACTERISTIC CURVE 01-June-2003 Rev. A Page 3 of 4 SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET f=1.0MHz 01-June-2003 Rev. A Page 4 of 4