SSE9973

SSE9973 Elektronische Bauelemente 14A, 60V,RDS(ON)80 m Ω N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSE9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. F e a t u r es * Low Gate Charge * Simple Drive Requirement REF. A b c D E L4 L5 D Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 G S A b s o l u t e M a x i m um R a t i n g s Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol VD S VG S ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 60 ± 20 14 9 40 27 0.22 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 4.5 62 o o Unit C /W C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSE9973 Elektronische Bauelemente 14A, 60V,RDS(ON)80 m Ω N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 60 _ Typ. _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±20V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID= 9A VGS=4.5V, ID= 6A o 0.05 _ _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 ±100 1 25 80 100 13 _ _ RD S ( O N ) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 8 3 4 7 15 16 3 720 77 45 8.6 nC ID= 9A VDS=48V VGS= 4.5V _ _ _ _ VDD=30V ID= 9A nS VGS=10V RG=3.3Ω RD=3. 3 Ω 1150 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID= 9A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Min. _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=14 A, VGS=0V Is=9 A,VGS=0V, dl/dt=100A/us 28 27 Qrr _ Notes: 1.Pulse width limited by safe operating area. 2. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSE9973 Elektronische Bauelemente 14A, 60V,RDS(ON)80 m Ω N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSE9973 Elektronische Bauelemente 14A, 60V,RDS(ON)80 m Ω N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4