SSF1321P

SSF1321P Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOT-323 A 3 L 3 Top View CB 1 2 2 FEATURES  1    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOT-323 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY RDS(on) ( 0.079@VGS= -4.5V 0.110@VGS= -2.5V  Gate K E D F G H J  Drain REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. VDS(V) -20 ID(A) -1.7 -1.5  Source MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction & Storage Temperature Range Maximum Thermal Resistance a Junction-Ambient Note: a. b. Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. SYMBOL VDS VGS ID @ TA=25°C ID @ TA=70°C IDM IS PD@ TA=25°C PD@ TA=70°C TJ, TSTG RATING -20 ±8 -1.7 -1.4 -2.5 ±0.28 0.34 0.22 -55~150 UNIT V V A A A W °C THERMAL RESISTANCE RATINGS 375 t ≦ 5 sec RθJA Steady-State 430 °C / W 17-Jun-2010 Rev. A Page 1 of 4 SSF1321P Elektronische Bauelemente -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Gate-Threshold Voltage Gate-Source Leakage Current VGS(th) IGSS -0.4 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) -5 Drain-Source On-Resistance a RDS(ON) Forward Transconductance a Diode Forward Voltage gFS VSD 9 -0.65 110 S V - ±100 -1 V nA VDS= VGS, ID = -250μA VDS= 0V, VGS= ±8V VDS= -16V, VGS= 0V μA -10 79 mΩ A VDS= -16V, VGS= 0V, TJ= 55°C VDS= -5V, VGS= -4.5V VGS= -4.5V, ID= -1.7A VGS= -2.5V, ID= -1.5A VDS= -5V, ID= -1.25A IS= -0.46A, VGS= 0V DYNAMIC CHARACTERISTICS b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes： a. b. c. Pulse test：PW ≦ 300us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Repetitive rating, pulse width limited by junction temperature. Qg Qgs Qgd Td(ON) TR Td(OFF) TF - 7.2 1.7 1.5 10 9 27 11 nS nC VDS= -10V VGS= -4.5V ID= -1.7A VDD= -10V IL= -1A VGEN= -4.5V RG= 6Ω - 17-Jun-2010 Rev. A Page 2 of 4 SSF1321P Elektronische Bauelemente -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET CHARACTERISTIC CURVES 17-Jun-2010 Rev. A Page 3 of 4 SSF1321P Elektronische Bauelemente -1.7A, -20V, RDS(on) 0.079Ω P-Channel MOSFET CHARACTERISTIC CURVES 17-Jun-2010 Rev. A Page 4 of 4