SSF1332E

SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A SOT-323 Dim A B C D D Description The SSF1332E provide the designer with the best Combination of fast switching, low on-resistance S 2 L 3 Top View Min 1.80 1.15 0.80 0.25 1.20 0.00 0.10 0.35 0.59 1.80 Max 2.20 1.35 1.00 0.40 1.40 0.10 0.25 0.50 0.72 2.40 B 1 and cost-effectiveness. G G H C J K J K L S Features * Simple gate drive * Small package outline * 2KV ESD rating (Per MIL-STD-883D) H Drain Gate Source D All Dimension in mm G Marking : 1332 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 ±6 600 470 2.5 0.35 0.003 Unit V V mA mA A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 360 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gat Thershold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) StaticDrain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ C V uA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C,ID=1mA VDS=VGS, ID=250uA VGS=± 6V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=0.6A VGS=2.5V, ID=0.4A o 0.02 _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 ± 10 1 10 600 850 2 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ mΩ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 1.3 0.3 0.5 4 10 15 2 38 17 12 1 nC ID=0.6A VDS=16V VGS=4.5V _ _ _ _ VDD=10V ID=0.6A nS VGS=10V RG=3.3Ω RD=16.7Ω 60 _ _ pF VGS=0V VDS=10V f=1.0MHz _ _ S VDS=5V, ID=0.6A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.6A, VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board, t≦10Sec. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSF1332E Elektronische Bauelemente 0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4