SSF84W

SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10 P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. A L 3 SOT-323 3 Top View CB 1 2 2 FEATURES Energy Efficient Miniature SOT–323 Surface Mount Package Saves Board Space 1 K E D F G H J APPLICATION DC-DC converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. MARKING PD W W：Date Code 2 Drain 1 Gate PACKAGE INFORMATION Package SOT-323 MPQ 3K Leader Size 7 inch 3 Source THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR–5 Board Maximum Junction–Ambient Total Device Dissipation Alumina Substrate Maximum Junction–Ambient Junction & Storage Temperature TA=25°C Derate above 25°C TA=25°C Derate above 25°C RθJA PD RθJA TJ, TSTG Symbol PD Rating 225 1.8 556 300 2.4 417 -55 ~ 150 Unit mW mW / ° C ° /W C mW mW / ° C ° /W C ° C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Nov-2011 Rev. A Page 1 of 4 SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10 P-Channel Enhancement Mode Power MOSFET MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage - Continuous TA=25° C Continuous Drain Current Pulsed Drain Current (tp≤10µs) Total Power Dissipation Maximum Lead Temperature for Soldering Purposes, for 10 seconds Maximum Junction–Ambient Operating Junction & Storage Temperature Range TA=25° C IDM PD TL RθJA TJ, TSTG -520 225 260 556 -55 ~ 150 mW ° C ° /W C ° C Symbol VDS VGS ID Rating -50 ±20 -130 Unit V V mA ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Source Leakage Current Symbol V(BR)DSS IGSS Min. -50 - Typ. - Max. ±60 -0.1 -15 -60 1 Unit V µA Teat Conditions VGS=0, ID = -250µA VGS= ±20V, VDS=0 VDS= -25V, VGS=0 OFF Characteristics Drain-Source Leakage Current IDSS - µA VDS= -50V, VGS=0 VDS = -50V, VGS=0, TJ =125°C ON Characteristics Gate Threshold Voltage Transfer Admittance Drain-Source On Resistance VGS(TH) |yfs| RDS(ON) -0.8 50 5 -2 10 V mS VDS=VGS, ID = -1mA VDS= -25V, ID= -100mA, f=1kHz VGS= -5V, ID= -100mA Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Td(on) Tr Td(off) Tf QT Ciss Coss Crss 2.5 1 16 8 6000 30 10 5 pF pC VDS= -5V VDS= -5V VDG= -5V nS VDD= -15V ID= -2.5A RL=50 Source-Drain Diode Continuous Current Pulsed Current Forward On Voltage 2 IS ISM VSD - -2.5 -0.130 -0.520 - A V Notes: 1. Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2% 2. Switching characteristics are independent of operating junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Nov-2011 Rev. A Page 2 of 4 SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10 P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Nov-2011 Rev. A Page 3 of 4 SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10 P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Nov-2011 Rev. A Page 4 of 4