SSG0410

SSG0410 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 FEATURES    Simple Drive Requirement Low Gate Charge Fast Switching Characteristic B L D M MARKING  Drain A C N J K  Gate D 8 D 7 D 6 D 5 H G F E  Source  0410SC   = Date Code REF. A B C D E F G 1 S 2 S 3 S 4 G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient 3 (Max.) TJ, TSTG RθJA THERMAL RESISTANCE RATINGS 50 °C / W SYMBOL VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD RATINGS 100 ±20 3.8 3.0 8 2.5 0.02 -55 ~ 150 UNIT V V A A A W W / °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Jun-2010 Rev. A Page 1 of 4 SSG0410 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(TJ=25°C) Drain-Source Leakage Current(TJ=55°C) Static Drain-Source On-Resistance 2 Total Gate Charge 2 Gate-Source Chagre Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS VGS(th) gfs IGSS IDSS MIN 100 1.0 - TYP 4 - MAX 3.0 ±100 10 25 UNIT V V S nA μA μA mΩ nC TEST CONDITION VGS=0V, ID =1mA VDS=10V, ID =1mA VDS=10V, ID =2.5A VGS=±20V VDS=100V, VGS=0V VDS=100V, VGS=0V VGS=10V, ID=2.7A VGS=6V, ID=2.5A VDS=80V, ID =3.5A, VGS=5V VDS=30V, VGS=10V I D=1A, RL=30Ω, RG=6Ω VDS=25V VGS=0V f=1MHz RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS Forward On Voltage 2 VSD V IS=3.8A, VGS=0V Notes： 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. 3. Surface mounted on 1 in2 copper pad of FR4 board；125 °C / W when mounted on Min. copper pad. 158 175 11.2 30 4.4 3 9 9.4 26.8 2.6 975 1670 38 27 SOURCE-DRAIN DIODE 1.2 nS pF http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Jun-2010 Rev. A Page 2 of 4 SSG0410 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Jun-2010 Rev. A Page 3 of 4 SSG0410 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-Jun-2010 Rev. A Page 4 of 4