SSG4228

SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4228 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. SOP-8 B FEATURES    L D M Low on-resistance Simple Drive Requirement Double-N MosFET Package H G A C N J K F E MARKING CODE REF. 4228SS    = Date Code PACKAGE INFORMATION Package SOP-8 MPQ 3K LeaderSize 13’ inch A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S G S G D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 Power Dissipation 1 3 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM PD RθJA Ratings 30 ±20 6.8 5.5 40 2 62.5 0.016 Unit V V A A W °C / W W / °C °C Maximum Junction to Ambient Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG -55~150 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 1 of 4 SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol BVDSS △BVDS/△Tj VGS(th) IGSS IDSS Min. 30 1 - Typ. Static 0.03 9 2 6 10 9 18 6 580 150 108 15 Max. 3 ±100 1 25 26 40 15 930 - Unit V V / °C V nA μA μA mΩ Test condition VGS=0V, ID=250μA Reference to 25°C, ID =1mA VDS=VGS, ID =250μA VGS=±20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID =6A VGS=4.5V, ID =4A ID= 6.8A VDS= 24V VGS= 4.5V VDS= 15V ID= 1A VGS= 10V RG= 3.3Ω RD= 15Ω VGS=0V VDS=25V f=1.0MHz VDS=10V, ID=6A Drain-Source On-Resistance 2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gfs Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transfer Conductance 2 nC nS pF S Source-Drain Diode Forward On Voltage 2 Reverse Recovery Time 2 VDS Trr Qrr - 15 9 1.3 - V nS nC IS=1.7A, VGS=0V, Tj=25°C IS =6.8A, VGS =0V dl/dt=100A/μs Reverse Recovery Charge Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width 300us, duty cycle 2%. 3 Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 2 of 4 SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 3 of 4 SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 18-Feb-2011 Rev. B Page 4 of 4