SSG4392N

SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOP-8 B L D M FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F E REF. A B C D E F G REF. H J K L M N APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D D D D PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leader Size 13’ inch S S G MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 1 Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, TSTG Ratings 150 Unit V V A A A A W W °C ±20 2.9 2.4 20 4 3.1 2.2 -55~150 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range 1 1 THERMAL RESISTANCE RATINGS Maximum Junction to Case t ≦ 5 sec t ≦ 5 sec RθJC RθJA 40 80 °C / W °C / W Maximum Junction to Ambient Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 1 of 4 SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Symbol VGS(th) IGSS IDSS ID(on) RDS(ON) gfs VSD Min. 1 1.5 - Typ. Static 10 0.7 Max. - Unit V nA μA A mΩ S V Test conditions VDS=VGS, ID=250μA VDS=0, VGS= ±20V VDS=120V, VGS=0 VDS=120V, VGS=0, TJ= 55°C VDS=5V, VGS=10V VGS=10V, ID=2.3A VGS=4.5V, ID=2.2A VDS=15V, ID=2.3A IS=2A, VGS=0 ±10 1 25 255 290 2 Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf 920 101 77 12 3.3 6.5 10 11 59 23 pF VDS=15V VGS=0 f=1MHz ID=2.3A VDS=75V VGS=4.5V VDD=75V ID=2.3A VGEN=10V RL= 32.3Ω RGEN=6Ω ns nC Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 2 of 4 SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 3 of 4 SSG4392N Elektronische Bauelemente 2.9A, 150V, RDS(ON) 255 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. B Page 4 of 4